Semiconductor memory device

ABSTRACT

A memory device includes a first cell above a substrate, a first line connected to the first cell, a second cell above the first cell connected with the first cell, a second line connected to the second cell, a third cell above the second cell connected with the second cell, a third line connected to the third cell, a fourth cell above the third cell connected with the third cell, a fourth line connected to the fourth cell, and a driver applying voltages to the lines when data is written to a cell in a write operation. To write data to the second cell, the driver applies a write voltage to the second line, applies a first voltage lower than the write voltage to the first line, and applies a second voltage higher than the first voltage and lower than the write voltage to the third and fourth lines.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.16/808,187, filed Mar. 3, 2020, which is based upon and claims thebenefit of priority from Japanese Patent Application No. 2019-168382,filed Sep. 17, 2019, the entire contents of which are incorporatedherein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A semiconductor memory device in which memory cells arethree-dimensionally arranged is known.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a configuration of asemiconductor memory device according to a first embodiment.

FIG. 2 is a circuit diagram of a block of a memory cell array in thesemiconductor memory device.

FIG. 3 is a sectional view of memory cell transistors of the memory cellarray.

FIG. 4 is a diagram illustrating a relationship between a thresholdvoltage distribution of the memory cell transistors and data storedtherein.

FIG. 5 is a block diagram of a row decoder module in the semiconductormemory device.

FIG. 6 is a circuit diagram of a block decoder of the row decodermodule.

FIG. 7 is a block diagram of a sense amplifier module in thesemiconductor memory device.

FIG. 8 is a circuit diagram of a sense amplifier unit of the senseamplifier module.

FIG. 9 is a flowchart illustrating a write operation in thesemiconductor memory device according to the first embodiment.

FIG. 10 is a timing chart of voltages applied to select gate lines, wordlines, and bit lines in the write operation.

FIG. 11 is a diagram illustrating sections of the word lines andvoltages applied to the word lines in the write operation.

FIG. 12 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to an A state during the write operation.

FIG. 13 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to a B state during the write operation.

FIG. 14 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to a C state during the write operation.

FIG. 15 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to a D state during the write operation.

FIG. 16 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to an E state during the write operation.

FIG. 17 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to an F state during the write operation.

FIG. 18 is a diagram illustrating voltages applied to the word lines inwriting of data corresponding to a G state during the write operation.

FIG. 19 is a diagram illustrating voltages applied to word lines, dummyword lines, and select gate lines in the write operation.

FIG. 20 is a flowchart illustrating a write operation according to afirst modification example of the first embodiment.

FIG. 21 is a diagram illustrating voltages applied to word lines, dummyword lines, and select gate lines in the write operation according tothe first modification example.

FIG. 22 is a diagram illustrating voltages applied to word lines anddummy word lines in symmetric writing.

FIG. 23 is a flowchart illustrating a write operation according to asecond modification example of the first embodiment.

FIG. 24 is a diagram illustrating voltages applied to word lines, dummyword lines, and select gate lines in the write operation according tothe second modification example.

FIG. 25 is a diagram illustrating voltages applied to word lines in awrite operation according to a comparative example 1.

FIG. 26 is a diagram illustrating voltages applied to word lines in awrite operation according to a comparative example 2.

FIG. 27 is a diagram illustrating threshold voltage distributions of thememory cell transistors according to the first embodiment, themodification examples, and the comparative examples.

FIG. 28 is a sectional view of memory cell transistors in a memory cellarray according to a second embodiment.

FIG. 29 is a diagram illustrating sections of word lines and voltagesapplied to the word lines in the write operation according to the secondembodiment.

FIG. 30 is a diagram illustrating sections of the word lines andvoltages applied to the word lines in the write operation according tothe second embodiment.

DETAILED DESCRIPTION

Embodiments provide a semiconductor memory device capable of improvingreliability of a write operation.

In general, according to one embodiment, a semiconductor memory deviceincludes a first memory cell provided above a substrate, a first wordline electrically connected to the first memory cell, a second memorycell provided above the first memory cell and connected in series withthe first memory cell, a second word line electrically connected to thesecond memory cell, a third memory cell provided above the second memorycell and connected in series with the second memory cell, a third wordline electrically connected to the third memory cell, a fourth memorycell provided above the third memory cell and connected in series withthe third memory cell, a fourth word line electrically connected to thefourth memory cell, and a driver circuit configured to apply voltages tothe first, second, third, and fourth word lines when data is written toa memory cell in a write operation. The driver circuit is configured to,in a first write operation for writing data to the second memory cell,apply a first write voltage to the second word line, apply a firstvoltage lower than the first write voltage to the first word line, andapply a second voltage higher than the first voltage and lower than thefirst write voltage to the third and fourth word lines.

Hereinafter, embodiments will be described with reference to thedrawings. In the following description, components having the samefunctions and configurations are denoted by common reference symbols. Inaddition, each embodiment to be described exemplifies a device and amethod for embodying the technical spirit of the embodiments, and amaterial, a shape, a structure, a disposition, and the like of thecomponent are not specified by ones to be described below.

Each functional block may be implemented by hardware, computer software,or a combination of hardware and computer software. It is not essentialthat each functional block is separated as in the following example. Forexample, some functions may be executed by a functional block differentfrom the illustrated functional block. Further, the illustratedfunctional block may be divided into smaller functional sub-blocks.Here, a three-dimensional stack type NAND flash memory in which memorycell transistors are stacked above a semiconductor substrate will bedescribed as an example of the semiconductor memory device. In thisspecification, a memory cell transistor may be referred to as a memorycell.

1. First Embodiment

Hereinafter, a semiconductor memory device according to a firstembodiment will be described.

1.1 Configuration of Semiconductor Memory Device

A configuration of the semiconductor memory device according to thefirst embodiment will be described with reference to FIG. 1 . Thesemiconductor memory device according to the first embodiment is, forexample, a NAND flash memory 10 configured to store data in anonvolatile manner.

FIG. 1 is a block diagram illustrating a configuration of thesemiconductor memory device according to the first embodiment. A NANDflash memory 10 includes a memory cell array 11, an input/output circuit12, a logic control circuit 13, a ready/busy circuit 14, a registergroup 15, a sequencer (or a control circuit) 16, a voltage generator 17,a driver 18, a row decoder module 19, a column decoder 20, and a senseamplifier module 21. The register group 15 includes a status register15A, an address register 15B, and a command register 15C.

The memory cell array 11 includes one or more blocks BLK0, BLK1, BLK2, .. . , BLKm (m is an integer equal to or larger than 0). Each of theplurality of blocks BLK includes a plurality of memory cell transistorscorresponding to rows and columns. The memory cell transistors arenonvolatile memory cells in which information can be electrically erasedand programmed. The memory cell array 11 includes a plurality of wordlines, a plurality of bit lines, and a source line in order to apply avoltage to the memory cell transistors. Hereinafter, each of the blocksBLK0 to BLKm is represented as the block BLK. A specific configurationof the block BLK will be described below.

The input/output circuit 12 and the logic control circuit 13 areconnected to an external device (for example, a memory controller) (notillustrated) via an input/output terminal. The input/output circuit 12transmits and receives a signal DQ (for example, DQ0, DQ1, DQ2, . . . ,DQ7) to and from the memory controller via the input/output terminal.

The logic control circuit 13 receives external control signals from thememory controller via the input/output terminal. The external controlsignals include, for example, a chip enable signal CEn, a command latchenable signal CLE, an address latch enable signal ALE, a write enablesignal WEn, a read enable signal REn, and a write protect signal WPn.The “n” appended to the signal name indicates that the signal is anactive low signal.

The chip enable signal CEn enables selection of the NAND flash memory10, and is asserted when the NAND flash memory 10 is selected. Thecommand latch enable signal CLE enables a command transmitted as thesignal DQ to be latched in the command register 15C. The address latchenable signal ALE enables an address transmitted as the signal DQ to belatched in the address register 15B. The write enable signal WEn enablesdata transmitted as the signal DQ to be stored in the input/outputcircuit 12. The read enable signal REn enables data read from the memorycell array 11 to be output as the signal DQ. The write protect signalWPn is asserted when writing and erasing to and from the NAND flashmemory 10 are prohibited.

The ready/busy circuit 14 generates a ready/busy signal R/Bn accordingto a control from the sequencer 16. The signal R/Bn indicates whetherthe NAND flash memory 10 is in a ready state or a busy state. The readystate indicates a state where a command from the memory controller canbe received. The busy state indicates a state where a command from thememory controller cannot be received. The memory controller receives thesignal R/Bn from the NAND flash memory 10, and thus the memorycontroller can recognize whether the NAND flash memory 10 is in theready state or the busy state based on the received signal R/Bn.

The status register 15A stores status information STS required for anoperation of the NAND flash memory 10, and transmits the statusinformation STS to the input/output circuit 12 based on an instructionfrom the sequencer 16. The address register 15B stores addressinformation ADD transmitted from the input/output circuit 12. Theaddress information ADD includes a column address and a row address. Therow address includes, for example, a block address for specifying ablock BLK to be operated and a page address for specifying a word lineto be operated in the specified block. The command register 15C stores acommand CMD transmitted from the input/output circuit 12. The commandCMD includes, for example, a write command for instructing the sequencer16 to perform a write operation, a read command for instructing thesequencer 16 to perform a read operation, and the like. For example, thestatus register 15A, the address register 15B, and the command register15C are SRAMs.

The sequencer 16 receives a command from the command register 15C, andoverall controls the NAND flash memory 10 according to a sequence basedon the command. The sequencer 16 executes a write operation, a readoperation, and an erasing operation by controlling the row decodermodule 19, the sense amplifier module 21, the voltage generator 17, andthe like. Specifically, the sequencer 16 writes data in the plurality ofmemory cell transistors specified by the address information ADD bycontrolling the row decoder module 19, the driver 18, and the senseamplifier module 21 based on the write command received from the commandregister 15C. The sequencer 16 also reads data from the plurality ofmemory cell transistors specified by the address information ADD bycontrolling the row decoder module 19, the driver 18, and the senseamplifier module 21 based on the read command received from the commandregister 15C.

The voltage generator 17 receives a power voltage from the outside ofthe NAND flash memory 10 via a power terminal which is not illustrated.A plurality of voltages required for a write operation, a readoperation, and an erasing operation are generated using the powervoltage. The voltage generator 17 supplies the generated voltage to thememory cell array 11, the driver 18, the sense amplifier module 21, andthe like.

The driver 18 receives the plurality of voltages supplied from thevoltage generator 17. The driver 18 supplies a plurality of voltages,which are selected according to a read operation, a write operation, andan erasing operation, among the plurality of voltages supplied from thevoltage generator 17, to the row decoder module 19 via a plurality ofsignal lines.

The row decoder module 19 receives a row address from the addressregister 15B, and decodes the row address. The row decoder module 19selects one of the blocks BLK based on the decoding result of the rowaddress, and further selects a word line in the selected block BLK.Further, the row decoder module 19 transmits the plurality of voltagessupplied from the driver 18 to the selected block BLK.

The column decoder 20 receives a column address from the addressregister 15B, and decodes the column address. The column decoder 20selects a bit line based on the decoding result of the column address.

The sense amplifier module 21 detects and amplifies data which is readfrom the memory cell transistor to the bit line in a data readoperation. The sense amplifier module 21 temporarily stores read dataDAT which is read from the memory cell transistor, and transmits theread data DAT to the input/output circuit 12. The sense amplifier module21 temporarily stores write data DAT transmitted from the input/outputcircuit 12 in a data write operation. Further, the sense amplifiermodule 21 transmits the write data DAT to the bit line.

1.1.1 Circuit Configuration of Memory Cell Array 11

Next, a circuit configuration of the memory cell array 11 will bedescribed. As described above, the memory cell array 11 includes theplurality of blocks BLK0 to BLKm. Here, although a circuit configurationof one block BLK will be described, circuit configurations of the otherblocks are the same.

FIG. 2 is a circuit diagram of one block BLK in the memory cell array11. The block BLK includes a plurality of string units SUs. Here, as anexample, the block BLK includes string units SU0, SU1, SU2, and SU3. Thenumber of string units in the block BLK may be freely set. Hereinafter,each of the string units SU0 to SU3 is represented as the string unitSU.

Each of the plurality of string units SUs includes a plurality of NANDstrings (or memory strings) NSs. The number of the NAND strings NSsincluded in one string unit SU may be freely set.

The NAND string NS includes a plurality of memory cell transistors MT0,MT1, MT2, . . . , and MT7, dummy memory cell transistors MTDD0, MTDD1,MTDS0, and MTDS1, and select transistors ST1 and ST2. Here, forsimplicity of explanation, the NAND string NS including eight memorycell transistors MT0 to MT7, four dummy memory cell transistors MTDD0,MTDD1, MTDS0, and MTDS1, and two select transistors ST1 and ST2 will bedescribed. On the other hand, the number of the memory cell transistors,the dummy memory cell transistors, and select transistors in the NANDstring NS may be freely set. Hereinafter, each of the memory celltransistors MT0 to MT7 is represented as the memory cell transistor MT.

Each of the memory cell transistors MT0 to MT7 includes a control gateand a charge storage layer, and stores data in a nonvolatile manner.Each of the dummy memory cell transistors MTDD0, MTDD1, MTDS0, and MTDS1includes a control gate and a charge storage layer similarly to thememory cell transistor MT, and is a memory cell transistor that may benot used for storing data or may be used for storing invalid data. Thedummy memory cell transistors MTDD0 and MTDD1, the memory celltransistors MT0 to MT7, and the dummy memory cell transistors MTDS0 andMTDS1 are connected in series between a source of the select transistorST1 and a drain of the select transistor ST2.

The memory cell transistor MT can store 1-bit data or data of 2 bits ormore. The memory cell transistor MT may be ametal-oxide-nitride-oxide-silicon (MONOS) transistor using an insulatingfilm as a charge storage layer, or a floating gate (FG) transistor usinga conductive layer as a charge storage layer.

Gates of the plurality of select transistors ST1 in the string unit SU0are connected to a select gate line SGD0. Similarly, gates of the selecttransistors ST1 of each of the string units SU1 to SU3 are respectivelyconnected to select gate lines SGD1 to SGD3. Each of the select gatelines SGD0 to SGD3 can be independently controlled by the row decodermodule 19.

Gates of the plurality of select transistors ST2 in the string unit SU0are connected to a select gate line SGS. Similarly, gates of the selecttransistors ST2 of each of the string units SU1 to SU3 are connected tothe select gate line SGS. The select transistor ST1 is used forselecting the string unit SU in various operations. Further, individualselect gate lines SGS may be respectively connected to the string unitsSU0 to SU3 in the block BLK. In this case, the select transistors ST1and ST2 are used for selecting the string unit SU in various operations.

Control gates of the memory cell transistors MT0 to MT7 and the dummymemory cell transistors MTDD0, MTDD1, MTDS0, and MTDS1 in the block BLKare respectively connected to word lines WL0 to WL7 and word linesWLDD0, WLDD1, WLDS0, and WLDS1. Each of the word lines WL0 to WL7 andthe word lines WLDD0, WLDD1, WLDS0, and WLDS1 can be independentlycontrolled by the row decoder module 19.

Each of bit lines BL0 to BLi (i is an integer equal to or larger than 0)is connected to the plurality of blocks BLK, and is connected to oneNAND string NS in the string unit SU of the block BLK. That is, each ofthe bit lines BL0 to BLi is connected to drains of the selecttransistors ST1 of the plurality of NAND strings NSs in the same column,among the NAND strings NSs arranged in a matrix configuration in theblock BLK. Further, a source line SL is connected to the plurality ofblocks BLK. The source line SL is connected to sources of the pluralityof select transistors ST2 in the block BLK.

In short, the string unit SU includes the plurality of NAND strings NSsthat are connected to the bit lines BLs different from each other andare connected to the same select gate line SGD. In addition, the blockBLK includes the plurality of string units SUs that are connected to thecommon word lines WLs. Further, the memory cell array 11 includes theplurality of blocks BLK that are connected to the common bit lines BLs.

The block BLK is, for example, a unit of data erasing. That is, datastored in the memory cell transistors MT of the same block BLK is erasedtogether. The data may be erased in a unit of the string unit SU or maybe erased in a unit with a size smaller than a size of the string unitSU.

The plurality of memory cell transistors MT that share the word line WLin one string unit SU are referred to as a cell unit CU. A set of 1-bitdata stored in each of the plurality of memory cell transistors MTincluded in the cell unit CU is referred to as a page. A storagecapacity of the cell unit CU changes according to the number of bits ofthe data stored in the memory cell transistors MT. For example, the cellunit CU stores 1-page data when each of the memory cell transistors MTstores 1-bit data, stores 2-page data when each of the memory celltransistors MT stores 2-bit data, or stores 3-page data when each of thememory cell transistors MT stores 3-bit data.

A write operation and a read operation to and from the cell unit CU areperformed using a page as a unit of writing or a unit of reading. Inother words, in the read operation and the write operation, one writeoperation or one read operation to and from the plurality of memory celltransistors MT, which are connected to one word line WL in one stringunit SU, is performed.

In addition, the memory cell array 11 may have another configuration.That is, a configuration of the memory cell array 11 is described in,for example, U.S. patent application Ser. No. 12/407,403 filed on Mar.19, 2009, “THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY”.Further, a configuration of the memory cell array 11 is described in,U.S. patent application Ser. No. 12/406,524 filed Mar. 18, 2009, “THREEDIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY”, U.S. patentapplication Ser. No. 12/679,991 filed on Mar. 25, 2010, “NON-VOLATILESEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME”, andU.S. patent application Ser. No. 12/532,030 filed on Mar. 23, 2009,“SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING SAME”. The entirecontents of these patent applications are incorporated herein byreference.

1.1.2 Sectional Structure of Memory Cell Array 11

Next, a sectional structure of the memory cell transistors in the memorycell array 11 will be described. FIG. 3 is a sectional view of thememory cell transistors in the memory cell array 11 according to thefirst embodiment. In subsequent drawings including FIG. 3 , it isassumed that two directions parallel to a surface of a semiconductorsubstrate 30 and perpendicular to each other are an X direction and a Ydirection, and that a direction perpendicular to a plane including the Xdirection and the Y direction (i.e., an XY plane) is a Z direction (or astack direction). In FIG. 3 , interlayer insulating films betweenconductive layers are omitted.

As illustrated in FIG. 3 , the memory cell array 11 includes asemiconductor substrate 30, conductive layers 31 to 34, memory pillarsMPs, and a contact plug CP1. A conductive layer 31 is provided above thesemiconductor substrate 30. The conductive layer 31 is formed in a flatplate shape parallel to the XY plane, and functions as the source lineSL. The main surface of the semiconductor substrate 30 corresponds tothe XY plane. The conductive layer 31 includes, for example, polysiliconin which impurities are doped.

A plurality of slits SLT along an XZ plane are arranged on theconductive layer 31 in the Y direction. A structure body (or a stackedbody) between adjacent slits SLT on the conductive layer 31 correspondsto, for example, one string unit SU.

A conductive layer 32, a plurality of conductive layers 33, a conductivelayer 34, and a conductive layer 35 are provided in this order from thelowest layer between adjacent slits SLT on the conductive layer 31.Among these conductive layers, conductive layers adjacent in the Zdirection are stacked via interlayer insulating films. Each of theconductive layers 32 to 34 is formed in a flat plate shape parallel tothe XY plane. The conductive layer 32 functions as the select gate lineSGS. The plurality of conductive layers 33 respectively function as thedummy word lines WLDS0 and WLDS1, the word lines WL0 to WL7, and thedummy word lines WLDD1 and WLDD0 in this order from the lowest layer.The conductive layer 34 functions as the select gate line SGD. Theconductive layers 32 to 34 include, for example, tungsten (W).

A plurality of memory pillars MPs are arranged, for example, in astaggered manner in the X direction and the Y direction. Each of theplurality of memory pillars MPs extends or penetrates through thestacked body between the slits SLT in the Z direction. Each of thememory pillars MPs is provided through the conductive layers 34, 33, and32 so as to reach an upper surface of the conductive layer 31 from anupper surface of the conductive layer 34. Each of the memory pillars MPsfunctions as one NAND string NS.

The memory pillar MP includes, for example, a block insulating layer 40,a charge storage layer 41, a tunnel insulating layer (also referred toas a tunnel insulating film) 42, and a semiconductor layer 43.Specifically, a block insulating layer 40 is provided on an inner wallof a memory hole for forming the memory pillar MP. A charge storagelayer 41 is provided on an inner wall of the block insulating layer 40.A tunnel insulating layer 42 is provided on an inner wall of the chargestorage layer 41. Further, a semiconductor layer 43 is provided on aninner wall of the tunnel insulating layer 42. The memory pillar MP mayhave a structure in which a core insulating layer is provided inside thesemiconductor layer 43.

In such a configuration of the memory pillar MP, a portion at which thememory pillar MP and the conductive layer 32 intersect with each otherfunctions as the select transistor ST2. In addition, portions at whichthe memory pillar MP and the conductive layers 33 intersect with eachother respectively function as the dummy memory cell transistors MTDS0and MTDS1, the memory cell transistors MT0 to MT7, and the dummy memorycell transistors MTDD1 and MTDD0. Further, a portion at which the memorypillar MP and the conductive layer 34 intersect with each otherfunctions as the select transistor ST1.

The semiconductor layer 43 functions as a channel layer for the dummymemory cell transistors MTDS0, MTDS1, MTDD0, and MTDD1, the memory celltransistors MT, and the select transistors ST1 and ST2. A current pathof the NAND string NS is formed inside the semiconductor layer 43.

The charge storage layer 41 has a function of storing charges injectedfrom the semiconductor layer 43 in the memory cell transistor MT. Thecharge storage layer 41 includes, for example, a silicon nitride film.

The tunnel insulating layer 42 functions as a potential barrier whencharges are injected from the semiconductor layer 43 to the chargestorage layer 41 or when charges stored in the charge storage layer 41are dispersed to the semiconductor layer 43. The tunnel insulating layer42 includes, for example, a silicon oxide film.

The block insulating film 40 prevents the charges stored in the chargestorage layer 41 from dispersing to the conductive layer 33 (i.e., wordline WL). The block insulating layer 40 includes, for example, a siliconoxide layer and a silicon nitride layer.

The conductive layer 35 is provided above an upper surface of the memorypillar MP via an interlayer insulating film. The conductive layer 35 isa line-shaped wiring layer extending in the Y direction, and functionsas the bit line BL. A plurality of conductive layers 35 are arranged inthe X direction, and each of the conductive layers 35 is electricallyconnected to one memory pillar MP corresponding to each string unit SU.Specifically, in each string unit SU, a contact plug CP1 is provided onthe semiconductor layer 43 in each memory pillar MP, and one conductivelayer 35 is provided on the contact plug CP1. The conductive layer 35includes, for example, aluminum (Al) or tungsten (W). The contact plugCP1 includes, for example, tungsten (W).

The number of the word lines WLs and the number of the select gate linesSGD and SGS are respectively changed according to the number of thememory cell transistors MT and the number of the select transistors ST1and ST2. The select gate line SGS may be configured with a plurality ofconductive layers, which are respectively provided as a plurality oflayers. The select gate line SGD may be configured with a plurality ofconductive layers, which are respectively provided as a plurality oflayers.

1.1.3 Threshold Voltage Distribution of Memory Cell Transistors

Next, a threshold voltage distribution of the memory cell transistorsand data stored therein will be described. FIG. is a diagramillustrating a relationship between the threshold voltage distributionof the memory cell transistors MT and the data stored therein. FIG. 4illustrates an example in which a triple-level cell (TLC) method capableof storing 3-bit data in one memory cell transistor MT is applied as astorage method of the memory cell transistor MT. In the presentembodiment, a single-level cell (SLC) method capable of storing 1-bitdata in one memory cell transistor MT, a multi-level cell (MLC) methodcapable of storing 2-bit data in one memory cell transistor MT, aquad-level cell (QLC) method capable of storing 4-bit data in one memorycell transistor MT, or the like may be applied.

The 3-bit data that can be stored in the memory cell transistor MT isdefined by a lower bit, a middle bit, and an upper bit. When the memorycell transistor MT stores 3-bit data, the memory cell transistor MT cantake anyone state among eight states corresponding to a plurality ofthreshold voltages. The eight states are referred to as states “Er”,“A”, “B”, “C”, “D”, “E”, “F”, and “G” in order from the lowest. Theplurality of memory cell transistors MT belonging to each of the states“Er”, “A”, “B”, “C”, “D”, “E”, “F”, and “G” form a threshold voltagedistribution as illustrated in FIG. 4 .

For example, data “111”, “110”, “100”, “000”, “010”, “011”, “001”, and“101” are respectively allocated to the states “Er”, “A”, “B”, “C”, “D”,“E”, “F”, and “G”. When it is assumed that the lower bit is “X”, themiddle bit is “Y”, and the upper bit is “Z”, the order of the bits is“Z, Y, X”. The relationship between the threshold voltage distributionand the data may be freely set.

In order to read the data stored in the memory cell transistor MT as aread target, the state to which the threshold voltage of the memory celltransistor MT belongs is determined. In order to determine the state,read voltages AR, BR, CR, DR, ER, FR, and GR are used.

The state “Er” corresponds to, for example, a state where data is erased(i.e., an erased state). The threshold voltage of the memory celltransistor MT belonging to the state “Er” is lower than the read voltageAR, and has, for example, a negative value.

The states “A” to “G” correspond to states where charges are injected tothe charge storage layer and thus data is written in the memory celltransistor MT. The threshold voltage of the memory cell transistor MTbelonging to each of the states “A” to “G” has, for example, a positivevalue. The threshold voltage of the memory cell transistor MT belongingto the state “A” is higher than the read voltage AR and is equal to orlower than the read voltage BR. The threshold voltage of the memory celltransistor MT belonging to the state “B” is higher than the read voltageBR and is equal to or lower than the read voltage CR. The thresholdvoltage of the memory cell transistor MT belonging to the state “C” ishigher than the read voltage CR and is equal to or lower than the readvoltage DR. The threshold voltage of the memory cell transistor MTbelonging to the state “D” is higher than the read voltage DR and isequal to or lower than the read voltage ER. The threshold voltage of thememory cell transistor MT belonging to the state “E” is higher than theread voltage ER and is equal to or lower than the read voltage FR. Thethreshold voltage of the memory cell transistor MT belonging to thestate “F” is higher than the read voltage FR and is equal to or lowerthan the read voltage GR. The threshold voltage of the memory celltransistor MT belonging to the state “G” is higher than the read voltageGR and is lower than a voltage VREAD.

The voltage VREAD is a voltage which is applied to the word line WLconnected to the memory cell transistors MT of the cell unit CU asnon-read targets, and is higher than the threshold voltage of the memorycell transistor MT in any state. For this reason, the memory celltransistor MT in which the voltage VREAD is applied to the control gateenters an ON state regardless of the data to be stored.

A verification voltage used in each write operation is set betweenadjacent threshold voltage distributions. Specifically, verificationvoltages AV, BV, CV, DV, EV, FV, and GV are respectively setcorresponding to the states “A”, “B”, “C”, “D”, “E”, “F”, and “G”. Forexample, the verification voltages AV, BV, CV, DV, EV, FV, and GV arerespectively set to voltages slightly higher than the read voltages AR,BR, CR, DR, ER, FR, and GR.

As described above, each memory cell transistor MT is set to be in onestate among the eight states, and can store 3-bit data. Further, writingand reading are performed in units of pages in one cell unit CU. Whenthe memory cell transistor MT stores 3-bit data, a lower bit, a middlebit, and an upper bit are respectively allocated to three pages in onecell unit CU. In the lower bits, the middle bits, and the upper bitsstored in the cell unit CU, pages to be written by one write operationor pages to be read by one read operation, that is, a set of the lowerbits, a set of the middle bits, and a set of the upper bits arerespectively referred to as a lower page, a middle page, and an upperpage.

When such data allocation is applied, the lower page is determined by aread operation using the read voltages AR and ER. The middle page isdetermined by a read operation using the read voltages BR, DR, and FR.The upper page is determined by a read operation using the read voltagesCR and GR.

1.1.4 Configuration of Row Decoder Module 19

Next, a configuration of the row decoder module 19 illustrated in FIG. 1will be described. FIG. 5 is a block diagram of the row decoder module19 according to the first embodiment.

The row decoder module 19 includes a plurality of row decoders RD0, RD1,RD2, . . . , RDm. The row decoders RD0 to RDm are respectively providedcorresponding to the blocks BLK0 to BLKm. Hereinafter, each of the rowdecoders RD0 to RDm is represented as the row decoder RD.

The row decoder RD includes a block decoder BD and a transmission switchgroup SW. The transmission switch group SW includes n-channel MOStransistors TT0, TT1, TT2, . . . , TT13, UDT0, and UST. As thetransistors TT0 to TT13, UDT0, and UST, high breakdown voltagetransistors may be used.

A signal BLKSEL is input to gates of the transistors TT0 to TT13. Drainsof the transistors TT2 to TT9 are respectively connected to signal linesCG2 to CG9, and sources of the transistors TT2 to TT9 are respectivelyconnected to the word lines WL0 to WL7. Drains of the transistors TT10and TT11 are respectively connected to signal lines CG10 and CG11, andsources of the transistors TT10 and TT11 are respectively connected tothe dummy word lines WLDD1 and WLDD0. Drains of the transistors TT0 andTT1 are respectively connected to signal lines CG0 and CG1, and sourcesof the transistors TT0 and TT1 are respectively connected to the dummyword lines WLDS0 and WLDS1. Drains of the transistors TT12 and TT13 arerespectively connected to signal lines SGDD0 and SGSD, and sources ofthe transistors TT12 and TT13 are respectively connected to the selectgate lines SGD0 and SGS.

A signal RDECADn is input to gates of the transistors UDT0 and UST. Adrain of the transistor UDT0 is connected to the select gate line SGD0,and a source of the transistor UDT0 is connected to a ground terminal towhich a ground voltage VSS is applied. A drain of the transistor UST isconnected to the select gate line SGS, and a source of the transistorUST is connected to the ground terminal to which the ground voltage VSSis applied.

The block decoder BD decodes a block address received from the addressregister 15B. When it is determined that the block BLK corresponding tothe block decoder BD is the block BLK to be selected based on thedecoding result of the block address, the block decoder BD outputs thesignal BLKSEL having a high level and the signal RDECADn having a lowlevel.

Thereby, in the transmission switch group SW corresponding to theselected block BLK, the transistors TT0 to TT13 enter an ON state, andthe transistors UDT0 and UST enter an OFF state. As a result, the wordlines WL0 to WL7 are respectively connected to the signal lines CG2 toCG9. The dummy word lines WLDD0, WLDD1, WLDS0, and WLDS1 arerespectively connected to the signal lines CG11, CG10, CG0, and CG1.Further, the select gate lines SGD0 and SGS are respectively connectedto the signal lines SGDD0 and SGSD.

On the other hand, when it is determined that the corresponding blockBLK is not the block BLK to be selected, the block decoder BD outputsthe signal BLKSEL having a low level and the signal RDECADn having ahigh level.

Thereby, in the transmission switch group SW corresponding to thenon-selected block BLK, the transistors TT0 to TT13 enter an OFF state,and the transistors UDT0 and UST enter an ON state. As a result, theword lines WL0 to WL7 are respectively disconnected from the signallines CG2 to CG9. The dummy word lines WLDD0, WLDD1, WLDS0, and WLDS1are respectively disconnected from the signal lines CG11, CG10, CG0, andCG1. Further, the select gate lines SGD0 and SGS are respectivelydisconnected from the signal lines SGDD0 and SGSD.

The driver 18 supplies a voltage to the signal lines CG0 to CG11, andSGDD0 and SGSD according to the address received from the addressregister 15B. The voltage supplied from the driver 18 is applied to theword lines WLs and the select gate lines SGD0 and SGS in the selectedblock BLK via the transistors TT0 to TT13 in the transmission switchgroup SW corresponding to the selected block BLK.

Next, an example of a configuration of the block decoder BD in the rowdecoder RD will be described. FIG. 6 is a circuit diagram of the blockdecoder BD illustrated in FIG. 5 . The block decoder BD includes a NANDgate ND, an inverter INV, and a level shifter LS.

A block address BLKADD is input from the address register 15B to aninput terminal of the NAND gate ND. In the block address BLKADD, all thebits are at a high level for a block to be selected, and at least onebit is at a low level for a non-selected block. The NAND gate ND outputsa signal RDECADn.

An input terminal of the inverter INV is connected to an output terminalof the NAND gate ND. The inverter INV outputs a signal RDECAD to thelevel shifter LS.

A boost voltage VPPH is supplied to the level shifter LS. The levelshifter LS boosts the signal RDECAD. When the signal RDECAD is boosted,the level shifter LS uses the boost voltage VPPH as a target voltage.The level shifter LS outputs a signal BLKSEL obtained by boosting.

With the above configuration, the block decoder BD outputs the signalBLKSEL and the signal RDECADn having logic levels different from eachother, to the transmission switch group SW.

1.1.5 Configuration of Sense Amplifier Module 21

Next, a configuration of the sense amplifier module 21 illustrated inFIG. 1 will be described. FIG. 7 is a block diagram of the senseamplifier module 21 according to the first embodiment.

The sense amplifier module 21 includes sense amplifier units SAU0 toSAUi corresponding to the bit lines BL0 to BLi. Hereinafter, each of thesense amplifier units SAU0 to SAUi is represented as the sense amplifierunit SAU. The sense amplifier unit SAU includes a sense amplifier SA anddata latch circuits ADL, BDL, CDL, SDL, TDL, and XDL. The senseamplifier SA and the data latch circuits ADL, BDL, CDL, SDL, TDL, andXDL are connected to each other such that data transmission can beperformed therebetween.

The data latch circuits ADL, BDL, CDL, SDL, and TDL temporarily storesdata. In a write operation, the sense amplifier SA controls a voltage ofthe bit line BL according to the data stored in the data latch circuitSDL. The data latch circuit TDL is used for data calculation in thesense amplifier module 21. The data latch circuits ADL, BDL, and CDL areused for multi-level operations when the memory cell transistor MTstores data of 2 bits or more. That is, the data latch circuit ADL isused to store bits of the lower page, the data latch circuit BDL is usedto store bits of the middle page, and the data latch circuit CDL is usedto store bits of the upper page. The number of the data latch circuitsin the sense amplifier unit SAU may be freely set according to thenumber of the bits stored in one memory cell transistor MT.

The data latch circuit XDL temporarily stores data. The data latchcircuit XDL is connected to the input/output circuit 12. The data latchcircuit XDL temporarily stores write data transmitted from theinput/output circuit 12, and temporarily stores read data transmittedfrom the data latch circuit SDL or the like. More specifically, datatransmission between the input/output circuit 12 and the sense amplifiermodule 21 is performed via the data latch circuit XDL for one page. Thewrite data received by the input/output circuit 12 is transmitted to oneof the data latch circuits ADL, BDL, and CDL via the data latch circuitXDL. The read data read by the sense amplifier SA is transmitted to theinput/output circuit 12 via the data latch circuit XDL. A set of thedata latch circuits XDL is also referred to as a data cache.

In the read operation, the sense amplifier SA detects data which is readto the corresponding bit line BL, and determines whether the data is “0”or “1”. Further, in the write operation, the sense amplifier SA appliesthe voltage to the bit line BL based on the write data.

Next, a specific configuration example of the sense amplifier unit SAUin the sense amplifier module 21 will be described. FIG. 8 is a circuitdiagram of the sense amplifier unit SAU in the sense amplifier module21. A plurality of signals supplied to the sense amplifier unit SAU arecontrolled by the sequencer 16.

First, a circuit configuration of the sense amplifier SA will bedescribed. The sense amplifier SA includes, for example, a p-channel MOStransistor TR1, n-channel MOS transistors TR2 to TR9, and a capacitorCAP.

A source of the transistor TR1 is connected to a power supply terminalto which a power voltage VDDSA for the sense amplifier is supplied, adrain of the transistor TR1 is connected to a drain of the transistorTR2, and a gate of the transistor TR1 is connected to a node INV_S inthe data latch circuit SDL. A source of the transistor TR2 is connectedto anode COM, and a signal BLX is input to a gate of the transistor TR2.

A drain of the transistor TR3 is connected to the node COM, and a signalBLC is input to a gate of the transistor TR3. A drain of the transistorTR4 is connected to a source of the transistor TR3, a source of thetransistor TR4 is connected to the corresponding bit line BL, and asignal BLS is input to a gate of the transistor TR4. The transistor TR4is a high breakdown voltage MOS transistor.

A drain of the transistor TR5 is connected to the node COM, a source ofthe transistor TR5 is connected to a node SRC, and a gate of thetransistor TR5 is connected to the node INV_S. For example, a groundvoltage VSS is supplied to the node SRC. A drain of the transistor TR6is connected to a node SEN, a source of the transistor TR6 is connectedto the node COM, and a signal XXL is input to a gate of the transistorTR6. A drain of the transistor TR7 is connected to the drain of thetransistor TR1, a source of the transistor TR7 is connected to the nodeSEN, and a signal HLL is input to a gate of the transistor TR7.

A source of the transistor TR8 is connected to a ground terminal towhich the ground voltage VSS is supplied, and a gate of the transistorTR8 is connected to the node SEN. A source of the transistor TR9 isconnected to a drain of the transistor TR8, a drain of the transistorTR9 is connected to a bus LBUS, and a signal STB is input to a gate ofthe transistor TR9. The signal STB is used to control a timing fordetermining data which is read to the bit line BL.

One electrode of the capacitor CAP is connected to the node SEN, and aclock signal CLK is input to the other electrode of the capacitor CAP.

Next, a circuit configuration of the data latch circuit SDL will bedescribed. The data latch circuit SDL includes inverters IN1 and IN2 andn-channel MOS transistors TR10 and TR11.

An input terminal of the inverter IN1 is connected to a node LAT_S, andan output terminal of the inverter IN1 is connected to the node INV_S.An input terminal of the inverter IN2 is connected to the node INV_S,and an output terminal of the inverter IN2 is connected to the nodeLAT_S. A drain of the transistor TR10 is connected to the node INV_S, asource of the transistor TR10 is connected to the bus LBUS, and a signalSTI is input to a gate of the transistor TR10. A drain of the transistorTR11 is connected to the node LAT_S, a source of the transistor TR11 isconnected to the bus LBUS, and a signal STL is input to a gate of thetransistor TR11. For example, data stored in the node LAT_S correspondsto the data stored in the data latch circuit SDL, and data stored in thenode INV_S corresponds to inverted data of the data stored in the nodeLAT_S. Since a circuit configuration of each of the data latch circuitsADL, BDL, CDL, TDL, and XDL is the same as that of the data latchcircuit SDL, a description thereof will be omitted.

1.2 Write Operation According to First Embodiment

Next, a write operation in the NAND flash memory 10 according to thefirst embodiment will be described. FIG. 9 is a flowchart illustrating awrite operation in the NAND flash memory 10. The write operation isexecuted in a unit of one word line WL. As illustrated in FIG. 9 , inthe order of writing to the word lines WL0 to WL7, for example, writingto the plurality of memory cell transistors MTs connected to the wordline WL0 (step S0) is performed, and subsequently, writing to theplurality of memory cell transistors MT connected to each of the wordlines WL1, WL2, . . . , and WL7 (steps S1 to S7) is performed in order.Hereinafter, a case where a write target in writing is the word line WLnwill be described.

First, in writing, voltages applied to the select gate lines SGD andSGS, the word lines WLs, and the bit lines BLs, and timings at which thevoltages are applied will be described with reference to FIG. 10 . FIG.10 is a timing chart of voltages applied to the select gate lines SGDand SGS, the word lines WLs, and the bit lines BLs in writing to theword lines WLn.

At a time t0, the sense amplifier module 21 applies the voltage VDDSA tothe non-selected (or write-prohibited) bit line BL. The sense amplifiermodule 21 supplies the voltage VSS to the selected bit line BL. Thevoltage VDDSA is a voltage at which the select transistor ST1 enters anOFF state when a voltage VSGD is applied to the selected select gateline SGD. The voltage VSS is a ground voltage (for example, 0 V) in theNAND flash memory 10.

Next, at a time t1, the row decoder module 19 applies the voltage VSGDto the selected select gate line SGD, and supplies the voltage VSS tothe non-selected select gate line SGD. The voltage VSGD is a voltagehigher than the voltage VSS. The sense amplifier module 21 continues toapply the voltage VDDSA to the non-selected bit line BL and continues toapply the voltage VSS to the selected bit line BL.

Next, at a time t2, the row decoder module 19 applies the followingvoltages to the selected word line WLn and the non-selected word linesWLn−3 to WLn+3. That is, a voltage VPASS1 is applied to the word linesWLn−3 and WLn−2, and a voltage VPASS4 is applied to the word line WLn−1.Additionally, a voltage VPASS3 is applied to the word lines WLn+1 andWLn+2, and a voltage VPASS2 is applied to the word line WLn+3.Furthermore, for example, the voltage VPASS3 is applied to the word lineWLn. The voltage applied to the word line WLn may be one voltage amongthe voltages VPASS1 to VPASS4. Here, among the voltages of the word lineWLn+1 and the word line WLn−1 adjacent to the word line WLn, the highervoltage is applied to the word line WLn.

When there is another word line WL between the word line WLn−3 and theselect gate line SGS, as in the word line WLn−3, a voltage VPASS1 isapplied to the other word line WL. Further, when there is another wordline WL between the word line WLn+3 and the select gate line SGD, as inthe word line WLn+3, a voltage VPASS2 is applied to the other word lineWL.

Next, at a time t3, the row decoder module 19 applies a write voltageVPGM to the selected word line WLn. The voltages of the othernon-selected word lines WL, the select gate lines SGD, and the bit linesBLs are maintained as the voltages applied at the time t2. The writevoltage VPGM is a voltage for injecting electrons to the charge storagelayer of the memory cell transistor MT as a write target. The writevoltage VPGM is higher than any one voltage of the voltages VPASS1 toVPASS4.

By applying the write voltage VPGM, electrons are injected to the chargestorage layer of the memory cell transistor MT which is a write targetand is connected to the selected word line WLn, and thus writing isperformed. Further, in the memory cell transistor MT which is not awrite target and is connected to the selected word line WLn, a channelpotential of the memory cell transistor is boosted, that is, the channelpotential is increased, and thus charges are unlikely to be injected tothe charge storage layer.

Next, at a time t4, the row decoder module 19 changes a voltage to beapplied to the selected word line WLn from the write voltage VPGM to thevoltage applied at the time t2 (i.e., the voltage VPASS3 in the presentembodiment). The voltages of the other non-selected word lines WLs, theselect gate lines SGD, and the bit lines BLs are maintained as thevoltages applied at the time t2.

Next, at a time t5, the row decoder module 19 applies the voltage VSS tothe selected word line WLn. The voltage VSS is also applied to the othernon-selected word lines WL, the select gate lines SGD, and the bit linesBLs. Thereafter, at a time t6, the voltages of the word lines WL, theselect gate lines SGD, and the bit lines BLs become the voltage VSS.

FIG. 11 is a diagram illustrating sections of the word lines WLn−3 toWLn+3 and voltages applied to the word lines WLn−3 to WLn+3 in writingto the word lines WLn (i.e., between t3 and t4).

As described above, in writing to the word lines WLn, the write voltageVPGM (for example, 14V to 20V) is applied to the selected word line WLn.The voltage VPASS3 (for example, 8V) is applied to the non-selected wordlines WLn+1 and WLn+2, and the voltage VPASS4 (for example, 6V) isapplied to the non-selected word line WLn−1. Further, the voltage VPASS1(for example, 4V to 10V) is applied to the non-selected word lines WLn−3and WLn−2, and the voltage VPASS2 (for example, 5V to 10V) is applied tothe non-selected word line WLn+3. Thereafter, when the write voltageVPGM is applied to the selected word line WLn as described above, thevoltage VPASS3 is applied to the non-selected word lines WLn+1 andWLn+2. Writing when the voltage VPASS4 different from the voltage VPASS3is applied to the non-selected word line WLn−1 is referred to asasymmetric writing.

The write voltage VPGM and the voltages VPASS1 and VPASS2 illustrated inFIG. 11 differ depending on the threshold voltages of the memory celltransistors MT in which data is to be written, that is, the states ofthe memory cell transistors MT among the A to G states.

FIGS. 12 to 18 are diagrams illustrating voltages applied to the wordlines WLn−3 to WLn+3 in writing of data corresponding to each of the Ato G states during a write operation.

As illustrated in FIG. 12 , when writing the data corresponding to the Astate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 14V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 4V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 5V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the A state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asfollows. The voltage VPASS3 is lower than the write voltage VPGM, and ishigher than the voltage VPASS4. The voltage VPASS4 is lower than thevoltage VPASS3, and is higher than the voltages VPASS1 and VPASS2. Thevoltage VPASS2 is lower than the voltage VPASS4, and is higher than thevoltage VPASS1. The voltage VPASS1 is lower than the voltage VPASS2.

As illustrated in FIG. 13 , when writing the data corresponding to the Bstate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 15V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 5V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 6V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the B state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asillustrated in FIG. 13 .

As illustrated in FIG. 14 , when writing the data corresponding to the Cstate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 16V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 6V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 7V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the C state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asillustrated in FIG. 14 .

As illustrated in FIG. 15 , when writing the data corresponding to the Dstate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 17V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 7V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 8V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the D state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asfollows. The voltage VPASS3 is lower than the write voltage VPGM, ishigher than the voltage VPASS4, and is substantially the same as thevoltage VPASS2. The voltage VPASS4 is lower than the voltages VPASS3,VPASS2, and VPASS1. The voltage VPASS2 is substantially the same as thevoltage VPASS3, and is higher than the voltages VPASS4 and VPASS1. Thevoltage VPASS1 is lower than the voltages VPASS3 and VPASS2, and ishigher than the voltage VPASS4.

As illustrated in FIG. 16 , when writing the data corresponding to the Estate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 18V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 8V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 9V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the E state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asfollows. The voltage VPASS3 is lower than the write voltage VPGM, and ishigher than the voltage VPASS4. The voltage VPASS4 is lower than thevoltages VPASS3, VPASS2, and VPASS1. The voltage VPASS2 is higher thanthe voltages VPASS3, VPASS4, and VPASS1. The voltage VPASS1 is lowerthan the voltage VPASS2, and is higher than the voltage VPASS4.

As illustrated in FIG. 17 , when writing the data corresponding to the Fstate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 19V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 9V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 10V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the F state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asillustrated in FIG. 17 .

As illustrated in FIG. 18 , when writing the data corresponding to the Gstate in the memory cell transistor MT connected to the word line WLn,the row decoder module 19 applies, for example, 20V as the write voltageVPGM to the word line WLn, 8V as the voltage VPASS3 to the word linesWLn+1 and WLn+2, and 6V as the voltage VPASS4 to the word line WLn−1.Further, the row decoder module 19 applies, for example, 10V as thevoltage VPASS1 to the word lines WLn−3 and WLn−2, and 11V as the voltageVPASS2 to the word line WLn+3.

When writing the data corresponding to the G state, for example, amagnitude relationship between the voltages VPASS1 to VPASS4 is asfollows. The voltage VPASS3 is lower than the write voltage VPGM, and ishigher than the voltage VPASS4. The voltage VPASS4 is lower than thevoltages VPASS3, VPASS2, and VPASS1. The voltage VPASS2 is higher thanthe voltages VPASS3, VPASS4, and VPASS1. The voltage VPASS1 is lowerthan the voltage VPASS2, and is higher than the voltage VPASS3 and thevoltage VPASS4.

In the above-described write operation, although the voltage VPASS3 isapplied to two word lines WLn+1 and WLn+2, the present disclosure is notlimited thereto. For example, the voltage VPASS3 may be applied to threeword lines WLn+1 to WLn+3 or four or more word lines.

Next, in writing to the word lines WL0 to WL7, voltages applied to theword lines WL0 to WL7, the dummy word lines WLDS0, WLDS1, WLDD0, andWLDD1, and the select gate lines SGD and SGS will be described withreference to FIG. 19 .

FIG. 19 is a diagram illustrating voltages applied to the word lines WL0to WL7, the dummy word lines WLDS0, WLDS1, WLDD0, and WLDD1, and theselect gate lines SGD and SGS in the write operation. FIG. 19illustrates a case where the data corresponding to the A state iswritten in the memory cell transistor MT connected to each of the wordlines WL0 to WL7.

In writing to the selected word line WL0, the write voltage VPGM (forexample, 14V) is applied to the word line WL0. A voltage VPASS3 (forexample, 8V) is applied to each of the word lines WL1 and WL2, and avoltage VPASS5 (for example, 6V) is applied to the dummy word lineWLDS1.

A voltage VPASS4 (for example, 6V) is applied to the dummy word lineWLDS0. A voltage VPASS2 (for example, 5V) is applied to each of the wordlines WL3 to WL7. A voltage VPASS5 (for example, 6V) is applied to thedummy word line WLDD1, and a voltage VPASS6 (for example, 3.4V) isapplied to the dummy word line WLDD0. Further, a voltage VSGS (forexample, 0V) is applied to the select gate line SGS, and a voltage VSGD(for example, 3V) is applied to the select gate line SGD.

In writing to the word line WL0, the dummy word line WLDS1 correspondsto the word line WLn−1, and thus the voltage applied to the dummy wordline WLDS1 is not the voltage VPASS4 but the voltage VPASS5.

Further, in writing to the selected word line WL1, the write voltageVPGM (for example, 14V) is applied to the word line WL1. A voltageVPASS3 (for example, 8V) is applied to each of the word lines WL2 andWL3, and a voltage VPASS4 (for example, 6V) is applied to the word lineWL0.

A voltage VPASS5 (for example, 6V) is applied to the dummy word lineWLDS1, and a voltage VPASS4 (for example, 6V) is applied to the dummyword line WLDS0. A voltage VPASS2 (for example, 5V) is applied to eachof the word lines WL4 to WL7. A voltage VPASS5 (for example, 6V) isapplied to the dummy word line WLDD1, and a voltage VPASS6 (for example,3.4V) is applied to the dummy word line WLDD0. Further, a voltage VSGS(for example, 0V) is applied to the select gate line SGS, and a voltageVSGD (for example, 3V) is applied to the select gate line SGD.

In writing to the selected word lines WL2 to WL5, the applied voltagesare as illustrated in FIG. 19 .

Further, in writing to the selected word line WL6, the write voltageVPGM (for example, 14V) is applied to the word line WL6. A voltageVPASS3 (for example, 8V) is applied to the word line WL7, and a voltageVPASS5 (for example, 6V) is applied to the dummy word line WLDD1. Avoltage VPASS4 (for example, 6V) is applied to the word line WL5.

A voltage VPASS6 (for example, 3.4V) is applied to the dummy word lineWLDD0. A voltage VPASS1 (for example, 4V) is applied to each of the wordlines WL0 to WL4. A voltage VPASS5 (for example, 6V) is applied to thedummy word line WLDS1, and a voltage VPASS6 (for example, 3.4V) isapplied to the dummy word line WLDS0. Further, a voltage VSGS (forexample, 0V) is applied to the select gate line SGS, and a voltage VSGD(for example, 3.0V) is applied to the select gate line SGD.

In the writing to the word line WL6, the dummy word line WLDD1corresponds to the word line WLn+2, and thus the voltage applied to thedummy word line WLDD1 is not the voltage VPASS3 but the voltage VPASS5.

Further, in writing to the selected word line WL7, the write voltageVPGM (for example, 14V) is applied to the word line WL7. A voltageVPASS5 (for example, 6V) is applied to the dummy word line WLDD1, and avoltage VPASS6 (for example, 3.4V) is applied to the dummy word lineWLDD0. A voltage VPASS4 (for example, 6V) is applied to the word lineWL6.

A voltage VPASS1 (for example, 4V) is applied to each of the word linesWL0 to WL5. A voltage VPASS5 (for example, 6V) is applied to the dummyword line WLDS1, and a voltage VPASS6 (for example, 3.4V) is applied tothe dummy word line WLDS0. Further, a voltage VSGS (for example, 0V) isapplied to the select gate line SGS, and a voltage VSGD (for example,3.0V) is applied to the select gate line SGD.

In the writing to the word line WL7, the dummy word lines WLDD1 andWLDD0 correspond to the word lines WLn+1 and WLn+2, and thus thevoltages applied to the dummy word lines WLDD1 and WLDD0 are not thevoltage VPASS3 but the voltages VPASS5 and VPASS6.

1.3 Write Operation According to First Modification Example

Next, a write operation according to a first modification example willbe described. In the write operation according to the first embodimentillustrated in FIG. 9 , asymmetric writing to all the word lines WL0 toWL7 is subsequently executed. On the other hand, in the firstmodification example, symmetric writing to the word line WL0 closest tothe source line SL or the select gate line SGS is executed, andasymmetric writing to the other word lines WL1 to WL7 is executed.

As illustrated in FIGS. 11 and 12 , the asymmetric writing is writing inwhich different voltages are applied to the word lines WLn+1 and WLn+2and the word line WLn−1 which are adjacent to the selected word lineWLn. The symmetric writing is writing in which the same voltage isapplied to the word line WLn+1 and the word line WLn−1 which areadjacent to the selected word line WLn. Details of the symmetric writingwill be described below.

First, a flow of a write operation according to the first modificationexample will be described with reference to FIG. 20 . FIG. 20 is aflowchart illustrating a write operation according to the firstmodification example. In the first modification example, symmetricwriting to the word line WL0 (step S10) is executed, and subsequently,asymmetric writing to the word lines WL1 to WL7 (steps S11 to S17) isexecuted in order.

Next, in writing to the word lines WL0 to WL7 according to the firstmodification example, the voltages applied to the word lines, the dummyword lines, and the select gate lines will be described with referenceto FIG. 21 . FIG. 21 is a diagram illustrating voltages applied to theword lines WL0 to WL7, the dummy word lines WLDS0, WLDS1, WLDD0, andWLDD1, and the select gate lines SGD and SGS according to the firstmodification example. FIG. 21 illustrates a case where the datacorresponding to the A state is written in the memory cell transistor MTconnected to each of the word lines WL0 to WL7.

In writing to the selected word line WL0, symmetric writing is executed.A write voltage VPGM (for example, 14V) is applied to the word line WL0.A voltage VPASS7 (for example, 10V) is applied to the dummy word lineWLDS1 and the word line WL1.

A voltage VPASS4 (for example, 6V) is applied to the dummy word lineWLDS0, and a voltage VPASS2 (for example, 5V) is applied to the wordlines WL2 to WL7. A voltage VPASS5 (for example, 6V) is applied to thedummy word line WLDD1, and a voltage VPASS6 (for example, 3.4V) isapplied to the dummy word line WLDD0. Further, a voltage VSGS (forexample, 0V) is applied to the select gate line SGS, and a voltage VSGD(for example, 3.0V) is applied to the select gate line SGD.

In writing to the selected word lines WL1 to WL7, the applied voltagesare the same as the voltages illustrated in FIG. 19 .

Next, symmetric writing to the word line WL0 will be described withreference to FIG. 22 . FIG. 22 is a diagram illustrating voltagesapplied to the word lines WL0 to WLn+3 and the dummy word lines WLDS0and WLDS1 when writing data corresponding to the A state in symmetricwriting.

In symmetric writing, when writing data corresponding to the A state inthe memory cell transistor MT connected to the word line WL0, a writevoltage VPGM (for example, 14V) is applied to the word line WL0. Thesame voltage VPASS7 (for example, 8V) is applied to the dummy word lineWLDS1 and the word line WLn+1 which are adjacent to the word line WL0.Further, a voltage VPASS4 (for example, 6V) is applied to the dummy wordline WLDS0, and a voltage VPASS2 (for example, 5V) is applied to each ofthe word lines WLn+2 and WLn+3.

The first modification example is different from the first embodiment inthat writing to the selected word line WL0 is not asymmetric writing butsymmetric writing.

1.4 Write Operation According to Second Modification Example

Next, a write operation according to a second modification example willbe described. In the second modification example, symmetric writing tothe word line WL0 and the word line WL7 is executed, and asymmetricwriting to the other word lines WL1 to WL6 is executed, the word lineWL0 being closest to the source line SL or the select gate line SGS, andthe word line WL7 being closest to the bit line BL or the select gateline SGD.

First, a flow of a write operation according to the second modificationexample will be described with reference to FIG. 23 . FIG. 23 is aflowchart illustrating a write operation according to the secondmodification example. In the second modification example, symmetricwriting to the word line WL0 (step S20) is executed, subsequently,asymmetric writing to the word lines WL1 to WL6 (steps S21 to S26) isexecuted in order, and symmetric writing to the word line WL7 (step S27)is executed.

Next, in writing to the word lines WL0 to WL7 according to the secondmodification example, the voltages applied to the word lines, the dummyword lines, and the select gate lines will be described with referenceto FIG. 24 . FIG. 24 is a diagram illustrating voltages applied to theword lines WL0 to WL7, the dummy word lines WLDS0, WLDS1, WLDD0, andWLDD1, and the select gate lines SGD and SGS according to the secondmodification example. Similar to FIG. 21 , FIG. 24 also illustrates acase where the data corresponding to the A state is written in thememory cell transistor MT connected to each of the word lines WL0 toWL7.

Similar to the first modification example, in writing to the selectedword line WL0, symmetric writing is executed, and in writing to theselected word lines WL1 to WL6, asymmetric writing is executed.

In writing to the selected word line WL7, symmetric writing is executed.A write voltage VPGM (for example, 14V) is applied to the word line WL7.A voltage VPASS7 (for example, 10V) is applied to the word line WL6 andthe dummy word line WLDD1.

A voltage VPASS1 (for example, 4V) is applied to the word lines WL0 toWL5. A voltage VPASS5 (for example, 6V) is applied to the dummy wordline WLDS1, and a voltage VPASS6 (for example, 3.4V) is applied to thedummy word line WLDS0. A voltage VPASS2 (for example, 5V) is applied tothe dummy word line WLDD0, a voltage VSGS (for example, 0V) is appliedto the select gate line SGS, and a voltage VSGD (for example, 3V) isapplied to the select gate line SGD.

The second modification example is different from the first embodimentin that writing to the selected word lines WL0 and WL7 is not asymmetricwriting but symmetric writing.

1.5 Effects According to First Embodiment

According to the first embodiment and the first and second modificationexamples, it is possible to provide a semiconductor memory devicecapable of improving reliability of a write operation.

Hereinafter, comparative examples 1 and 2 related to the firstembodiment and the modification examples will be described, and theneffects according to the first embodiment and the modification exampleswill be described. FIG. 25 illustrates voltages applied to the wordlines WLs in a write operation according to a comparative example 1, andFIG. 26 illustrates voltages applied to the word lines WLs in a writeoperation according to a comparative example 2. FIG. 27 illustratesthreshold voltage distributions of the memory cell transistors accordingto the first embodiment, the modification examples, and the comparativeexamples 1 and 2.

In the comparative example 1, as illustrated in FIG. 25 , in anoperation of writing data corresponding to the A state in the memorycell transistor connected to the word line WLn, a write voltage VPGM(for example, 14V) is applied to the word line WLn as a write target.Further, 10V is applied to the word lines WLn−1 and WLn+1, 4V is appliedto the word lines WLn−3 and WLn−2, and 5V is applied to the word linesWLn+2 and WLn+3. In such a write operation, as illustrated in FIG. 27 bya broken line 27 a, the base of the threshold voltage distribution ofthe memory cell transistors MT may be expanded due to a neighboring wordline interference effect.

In the comparative example 2, as illustrated in FIG. 26 , in anoperation of writing data corresponding to the A state in the memorycell transistor connected to the word line WLn, a write voltage VPGM(for example, 14V) is applied to the word line WLn as a write target.Further, 6V is applied to the word line WLn−1, 10V is applied to theword line WLn+1, 4V is applied to the word lines WLn−3 and WLn−2, and 5Vis applied to the word lines WLn+2 and WLn+3. In such a write operation,boosting efficiency in the channel of the memory cell transistor MT as anon-write target decreases, that is, a channel potential of the memorycell transistor MT as a non-write target decreases, the channelpotential being a voltage which increases by boosting using the wordline voltage. For this reason, as illustrated in FIG. 27 by a brokenline 27 b, the threshold voltage distribution of the memory celltransistor in the Er state approaches the threshold voltage distributionof the memory cell transistor in the A state (hereinafter, deteriorationof the threshold voltage distribution in the Er state).

On the other hand, in the first embodiment and the first and secondmodification examples, in writing to the word line WLn, a write voltageVPGM (for example, 14V) is applied to the word line WLn connected to thememory cell transistor as a write target. Further, a voltage VPASS4 isapplied to the word line WLn−1, and a voltage VPASS3 higher than thevoltage VPASS4 is applied to the word lines WLn+1 and WLn+2.

More specifically, in the comparative examples 1 and 2, 10V is appliedto the word line WLn+1. On the other hand, in the first embodiment andthe first and second modification examples, a voltage VPASS3 (forexample, 8V) lower than 10V, which is applied in the comparativeexamples 1 and 2, is applied to the two word lines WLn+1 and WLn+2. Inthis manner, by applying the voltage VPASS3 (8V) lower than 10V, whichis applied in the comparative examples 1 and 2, to the two word linesWLn+1 and WLn+2, boosting efficiency is increased by the voltage VPASS3applied to the word lines WLn+1 and WLn+2, and thus the channelpotential of the memory cell transistor MT is increased as compared withthe comparative examples 1 and 2. Thereby, as illustrated in FIG. 27 bya solid line 27 d, deterioration of the threshold voltage distributionin the Er state can be prevented.

Further, in the comparative example 1, 10V is applied to the word lineWLn−1. On the other hand, in the first embodiment and the first andsecond modification examples, a voltage VPASS4 (for example, 6V) lowerthan 10V, which is applied in the comparative example 1, is applied tothe word line WLn−1. As described above, by applying the voltage VPASS4(6V) lower than 10V applied in the comparative example 1 to the wordline WLn−1, as illustrated in FIG. 27 by a solid line 27 c, expansion ofthe base of the threshold voltage distribution of the memory celltransistor MT due to the neighboring word line interference effect canbe prevented.

Further, in the first embodiment and the first and second modificationexamples, since only the voltages VPASS4 and VPASS3 applied to the wordlines WLn−1, WLn+1, and WLn+2 are increased or decreased, a speed inwrite operation is not reduced.

As described above, in the first embodiment and the first and secondmodification examples, it is possible to prevent expansion of the baseof the threshold voltage distribution of the memory cell transistor MT,and prevent the phenomenon that the threshold voltage distribution ofthe memory cell transistor MT in the Er state approaches the thresholdvoltage distribution of the memory cell transistor MT in the A state.Thereby, in the first embodiment, it is possible to improve reliabilityof the write operation.

Further, in the first modification example, symmetric writing to theword line WL closest to the source line SL is performed, and asymmetricwriting to the other word lines WLs is performed. Thereby, it ispossible to improve boosting efficiency in the channel of the memorycell transistor MT in writing to the word line WL0, and prevent writedisturbance occurring when writing.

In the second modification example, symmetric writing to the word lineWL0 closest to the source line SL and the word line WL7 closest to thebit line BL is performed, and asymmetric writing to the other word linesWLs is performed. Thereby, it is possible to improve boosting efficiencyin the channel of the memory cell transistor MT in writing to the wordlines WL0 and WL7, and prevent write disturbance occurring when writing.

2. Second Embodiment

Next, a semiconductor memory device according to a second embodimentwill be described. The semiconductor memory device according to thesecond embodiment has a structure in which stacked bodies obtained bystacking the plurality of word lines are disposed in two stages (i.e.,upper and lower stages) on a substrate. Other configurations are thesame as those of the first embodiment. In the second embodiment,differences from the first embodiment will be mainly described.

First, a sectional structure of the memory cell transistors of thememory cell array 11 according to the second embodiment will bedescribed with reference to FIG. 28 . FIG. 28 is a sectional view of thememory cell transistors of the memory cell array 11. In FIG. 28 ,interlayer insulating films between conductive layers are omitted.

The memory cell array 11 includes a lower stacked body 50 provided onthe semiconductor substrate 30 and an upper stacked body 51 provided onthe stacked body 50. The stacked body 50 includes a plurality ofconductive layers 32 and 33 and a plurality of lower memory pillarsLMPs. The stacked body 51 includes a plurality of conductive layers 33and 34 and a plurality of upper memory pillars UMPs. A bonding layer 52is provided between the lower memory pillar LMP and the upper memorypillar UMP. The bonding layer 52 electrically connects the lower memorypillar LMP and the upper memory pillar UMP. The bonding layer 52includes, for example, a semiconductor layer. In one memory pillar MP,the lower memory pillar LMP, the bonding layer 52, and the upper memorypillar UMP are provided.

Specifically, referring to FIG. 28 , a conductive layer 31 is providedabove the semiconductor substrate 30. The conductive layer 31 is formedin a flat plate shape parallel to the XY plane, and functions as thesource line SL. The main surface of the semiconductor substrate 30corresponds to the XY plane.

A plurality of slits SLT along an XZ plane are arranged on theconductive layer 31 in the Y direction. An assembly of the stacked bodyor the structure body 50, the stacked body 51, and the bonding layer 52between the adjacent slits SLT on the conductive layer 31 correspondsto, for example, one string unit SU.

The conductive layer 32, the plurality of conductive layers 33, thebonding layer 52, the conductive layer 34, and the conductive layer 35are provided in this order from the lowest layer between adjacent slitsSLT on the conductive layer 31. Among these conductive layers,conductive layers adjacent in the Z direction are stacked via interlayerinsulating films. Each of the conductive layers 32 to 34 is formed in aflat plate shape parallel to the XY plane.

The conductive layer 32 functions as the select gate line SGS. Theplurality of conductive layers 33 respectively function as the dummyword lines WLDS0 and WLDS1, the word lines WL0 to WL7, the dummy wordlines WLDL and WLDU, the word lines WL8 to WL15, and the dummy wordlines WLDD1 and WLDD0, in order from the lowest layer. The conductivelayer 34 functions as the select gate line SGD.

A plurality of memory pillars MPs are arranged, for example, in astaggered manner in the X direction and the Y direction. Each of theplurality of memory pillars MPs extends or penetrates through thestacked bodies 50 and 51 between the slits SLT in the Z direction. Eachof the memory pillars MPs is provided through the conductive layers 34,33, and 32 so as to reach an upper surface of the conductive layer 31from an upper surface of the conductive layer 34. Each of the memorypillars MP functions as one NAND string NS.

The memory pillar MP includes, for example, a block insulating layer 40,a charge storage layer 41, a tunnel insulating layer (also referred toas a tunnel insulating film) 42, and a semiconductor layer 43.Specifically, the block insulating layer 40 is provided on an inner wallof a memory hole for forming the memory pillar MP. The charge storagelayer 41 is provided on an inner wall of the block insulating layer 40.The tunnel insulating layer 42 is provided on an inner wall of thecharge storage layer 41. Further, the semiconductor layer 43 is providedinside the tunnel insulating layer 42. The memory pillar MP may have astructure in which a core insulating layer is provided inside thesemiconductor layer 43.

A contact plug CP1 is provided on each memory pillar MP. Further, theconductive layer 35 is provided on the contact plug CP1. The conductivelayer 35 functions as the bit line BL. The conductive layer 35 iselectrically connected to the semiconductor layer 43 of the memorypillar MP via the contact plug CP1.

Next, an example of a write operation according to the second embodimentwill be described with reference to FIG. 29 and FIG. 30 . FIG. 29 is adiagram illustrating voltages applied to the word lines WL5 to WL11 inwriting to the word line WL7 (WLn). FIG. 29 illustrates a case where thedata corresponding to the A state is written in the memory celltransistor MT connected to the word line WL7.

In writing to the word line WL7 (WLn), for example, 14V as the writevoltage VPGM is applied to the selected word line WL7. For example, 8Vas the voltage VPASS3 is applied to the dummy word lines WLDL (WLn+1)and WLDU (WLn+2), and for example, 6V as the voltage VPASS4 is appliedto the non-selected word line WL6 (WLn−1). For example, 4V as thevoltage VPASS1 is applied to the non-selected word line WL5 (WLn−2), andfor example, 5V as the voltage VPASS2 is applied to the non-selectedword lines WL8 (WLn+3) to WL11 (WLn+6).

In the second embodiment, the dummy word lines WLDL and WLDU areprovided between the word lines WL7 and WL8. As described above, whenthe dummy word line is provided between the word lines WLs, the dummyword line is not set as the write target word line WLn. On the otherhand, the voltage VPASS3 or the voltage VPASS4 may be applied to theword lines WLn+1 and WLn+2 or the word line WLn−1, each of which isadjacent to the write target word line WLn.

In the example illustrated in FIG. 29 , the dummy word lines WLDL andWLDU are not set as the write target word line WLn, that is, theselected word line WLn. On the other hand, the dummy word lines WLDL andWLDU are set as the word lines WLn+1 and WLn+2 adjacent to the selectedword line WLn, and the voltage VPASS3 (for example, 8V) is applied tothe word lines WLn+1 and WLn+2.

FIG. 30 is a diagram illustrating voltages applied to the word lines WL5to WL11 in writing to the word line WL8 (WLn). Similar to FIG. 29 , FIG.30 also illustrates a case where the data corresponding to the A stateis written in the memory cell transistor MT connected to the word lineWL8.

In writing to the word line WL8 (WLn), for example, 14V as the writevoltage VPGM is applied to the selected word line WL8. For example, 8Vas the voltage VPASS3 is applied to the word lines WL9 (WLn+1) and WL10(WLn+2), and for example, 6V as the voltage VPASS4 is applied to thedummy word line WLDU (WLn−1). For example, 4V as the voltage VPASS1 isapplied to the dummy word line WLDL (WLn−2) and the non-selected wordlines WL7 (WLn−3) to WL5 (WLn−5), and for example, 5V as the voltageVPASS2 is applied to the non-selected word line WL11 (WLn+3).

In the example illustrated in FIG. 30 , the dummy word lines WLDL andWLDU are not set as the write target word line WLn, that is, theselected word line WLn. On the other hand, the dummy word line WLDU isset as the word line WLn−1 adjacent to the selected word line WLn, andthe voltage VPASS4 (for example, 6V) is applied to the word line WLn−1.

2.2 Effects According to Second Embodiment

According to the second embodiment, as in the first embodiment and themodification examples, it is possible to provide a semiconductor memorydevice capable of improving reliability of the write operation.

Further, the write operation proposed in this specification may beapplied even when a dummy word line is provided between a plurality ofstacked bodies in which the word lines WLs are stacked.

3. Other Modification Examples

In the semiconductor memory device according to the embodiments, thememory cell transistor MT0 is provided near the select transistor ST2and the memory cell transistor MT7 is provided near the selecttransistor ST1, but the order of the memory cell transistors is notlimited to the configuration. The order of the memory cell transistorsmay be upside down. For example, the memory cell transistor MT0 may beprovided near the select transistor ST1 and the memory sell transistorMT7 may be provided near the select transistor st2.

In the embodiments, although the NAND flash memory is described as anexample of the semiconductor memory device, the present disclosure isnot limited to the NAND flash memory. For example, the presentdisclosure can be generally applied to other semiconductor memorydevices, and can be applied to various memory devices other than thesemiconductor memory.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: a source line; a bit line; a first word line between the source line and the bit line; a second word line between the first word line and the bit line; a third word line between the second word line and the bit line; a fourth word line between the third word line and the bit line a pillar penetrating through the first, second, third, and fourth word lines along a first direction and electrically connected to the source line and the bit line; and a driver circuit configured to apply voltages to the first, second, third, and fourth word lines, wherein the first, second, third, and fourth word lines are stacked via interlayer insulating films, a first memory cell is formed at an intersection of the first word line and the pillar, a second memory cell is formed at an intersection of the second word line and the pillar, a third memory cell is formed at an intersection of the third word line and the pillar, a fourth memory cell is formed at an intersection of the fourth word line and the pillar, the first, second, third, and fourth memory cells are electrically connected in series, and the driver circuit is configured to, in a first write operation for writing data to the second memory cell, apply a first write voltage to the second word line, apply a first voltage lower than the first write voltage to the first word line, and apply a second voltage higher than the first voltage and lower than the first write voltage to the third and fourth word lines.
 2. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line, wherein the pillar penetrates through the fifth word line along the first direction, the first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, and the driver circuit is further configured to, in the first write operation, apply a third voltage lower than the first write voltage to the fifth word line.
 3. The semiconductor memory device according to claim 2, wherein the third voltage is equal to the second voltage.
 4. The semiconductor memory device according to claim 2, further comprising: a sixth word line between the source line and the first word line, wherein the pillar penetrates through the sixth word line along the first direction, the first, second, third, fourth, fifth, and sixth word lines are stacked via the interlayer insulating films, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the sixth and first memory cells are electrically connected in series, the driver circuit is further configured to, in the first write operation, apply a fourth voltage lower than the first voltage to the sixth word line, and the third voltage is between the fourth voltage and the first voltage.
 5. The semiconductor memory device according to claim 1, further comprising: a semiconductor substrate above which the first, second, third, and fourth word lines are stacked.
 6. The semiconductor memory device according to claim 1, wherein after the first write operation, a state of the second memory cell transitions from an erased state to a first state where a memory cell is read by a predetermined read voltage.
 7. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line, wherein the pillar penetrates through the fifth word line along the first direction, the first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, the driver circuit is further configured to, in a second write operation for writing data to the second memory cell: apply a second write voltage to the second word line, apply a fifth voltage lower than the second write voltage to the first word line, apply a sixth voltage higher than the fifth voltage and lower than the second write voltage to the third and fourth word lines, and apply a seventh voltage equal to the fifth voltage to the fifth word line.
 8. The semiconductor memory device according to claim 7, further comprising: a sixth word line between the source line and the first word line, wherein the pillar penetrates through the sixth word line along the first direction, the sixth, first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the sixth and first memory cells are electrically connected in series, and the driver circuit is further configured to, in the second write operation, apply an eighth voltage lower than the fifth and seventh voltages to the sixth word line.
 9. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line; and a sixth word line between the source line and the first word line, wherein the pillar penetrates through the fifth and sixth word lines along the first direction, the sixth, first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, the sixth and first memory cells are electrically connected in series, the driver circuit is further configured to, in a third write operation for writing data to the second memory cell: apply a third write voltage to the second word line, apply a fifth voltage lower than the third write voltage to the first word line, apply a sixth voltage higher than the fifth voltage and lower than the third write voltage to the third and fourth word lines, apply a seventh voltage lower than the sixth voltage and higher than the fifth voltage to the fifth word line, and apply an eighth voltage equal to the fifth voltage to the sixth word line.
 10. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line, wherein the pillar penetrates through the fifth word line along the first direction, the first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, and the driver circuit is further configured to, in a fourth write operation for writing data to the second memory cell: apply a fourth write voltage to the second word line, apply a fifth voltage lower than the fourth write voltage to the first word line, apply a sixth voltage higher than the fifth voltage and lower than the fourth write voltage to the third and fourth word lines, and apply a seventh voltage equal to the sixth voltage to the fifth word line.
 11. The semiconductor memory device according to claim 10, further comprising: a sixth word line between the source line and the first word line, wherein the pillar penetrates through the sixth word line along the first direction, the sixth, first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the sixth and first memory cells are electrically connected in series, and the driver circuit is further configured to, in the fourth write operation, apply an eighth voltage higher than the fifth voltage and lower than the sixth and seventh voltages and to the sixth word line.
 12. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line, wherein the pillar penetrates through the fifth word line along the first direction, the first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, and the driver circuit is further configured to, in a fifth write operation for writing data to the second memory cell: apply a fifth write voltage to the second word line, apply a fifth voltage lower than the fifth write voltage to the first word line, apply a sixth voltage higher than the fifth voltage and lower than the fifth write voltage to the third and fourth word lines, and apply a seventh voltage higher than the sixth voltage to the fifth word line.
 13. The semiconductor memory device according to claim 12, further comprising: a sixth word line between the source line and the first word line, wherein the pillar penetrates through the sixth word line along the first direction, the sixth, first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the sixth and first memory cells are electrically connected in series, and the driver circuit is further configured to, in the fifth write operation, apply an eighth voltage equal to the sixth voltage to the sixth word line.
 14. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the fourth word line and the bit line; and a sixth word line between the source line and the first word line, wherein the pillar penetrates through the fifth and sixth word lines along the first direction, the sixth, first, second, third, fourth, and fifth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, the fourth and fifth memory cells are electrically connected in series, the sixth and first memory cells are electrically connected in series, and the driver circuit is further configured to, in a sixth write operation for writing data to the second memory cell: apply a sixth write voltage to the second word line, apply a fifth voltage lower than the sixth write voltage to the first word line, apply a sixth voltage higher than the fifth voltage and lower than the sixth write voltage to the third and fourth word lines, apply a seventh voltage higher than the sixth voltage and lower than the sixth write voltage to the fifth word line, and apply an eighth voltage higher than the sixth voltage and lower than the seventh voltage to the sixth word line.
 15. The semiconductor memory device according to claim 1, further comprising: a fifth word line between the source line and the first word line, wherein the pillar penetrates through the fifth word line in the first direction, the fifth, first, second, third, and fourth word lines are stacked via the interlayer insulating films, a fifth memory cell is formed at an intersection of the fifth word line and the pillar, the fifth and first memory cells are electrically connected in series, and the driver circuit is further configured to, in a second write operation for writing data in the first memory cell, the second write operation being performed before the first write operation is performed: apply a second write voltage to the first word line, and apply a fifth voltage higher than the second voltage to the fifth word line and the second word line.
 16. The semiconductor memory device according to claim 15, further comprising: a sixth word line between the fourth word line and the bit line; a seventh word line between the sixth word line and the bit line; and an eighth word line between the seventh word line and the bit line, wherein the pillar penetrates through the sixth, seventh, and eighth word lines along the first direction, the fifth, first, second, third, fourth, sixth, seventh, and eighth word lines are stacked via the interlayer insulating films, a sixth memory cell is formed at an intersection of the sixth word line and the pillar, a seventh memory cell is formed at an intersection of the seventh word line and the pillar, an eighth memory cell is formed at an intersection of the eighth word line and the pillar, the fourth and sixth memory cells are electrically connected in series, the sixth and seventh memory cells are electrically connected in series, the seventh and eighth memory cells are electrically connected in series, and the driver circuit is further configured to, in a third write operation for writing data in the seventh memory cell, the third write operation being performed after the first write operation has been performed: apply a third write voltage to the seventh word line, and apply the fifth voltage lower than the third write voltage to the sixth and eighth word lines.
 17. The semiconductor memory device according to claim 1, further comprising: a row decoder electrically connected to the driver circuit and the first, second, third, and fourth word lines, wherein the first write voltage, the first voltage, and the second voltage are applied to the second word line, the first word line, and the third and fourth word lines via the row decoder, respectively.
 18. The semiconductor memory device according to claim 17, further comprising: a memory cell array including the first, second, third, and fourth memory cells; and a sense amplifier electrically connected to the bit line and arranged on one side of the memory cell array that is different from one side of the memory cell array where the row decoder is arranged.
 19. A semiconductor memory device comprising: a source line; a bit line; a first word line between the source line and the bit line; a second word line between the first word line and the source line; a third word line between the second word line and the source line; a fourth word line between the third word line and the source line; a pillar penetrating through the first, second, third, and fourth word lines along a first direction and electrically connected to the source line and the bit line; and a driver circuit configured to apply voltages to the first, second, third, and fourth word lines, wherein the first, second, third, and fourth word lines are stacked via interlayer insulating films, a first memory cell is formed at an intersection of the first word line and the pillar, a second memory cell is formed at an intersection of the second word line and the pillar, a third memory cell is formed at an intersection of the third word line and the pillar, a fourth memory cell is formed at an intersection of the fourth word line and the pillar, the first, second, third, and fourth memory cells are electrically connected in series, and the driver circuit is configured to, in a first write operation for writing data to the second memory cell: apply a first write voltage to the second word line, apply a first voltage lower than the first write voltage to the first word line, and apply a second voltage higher than the first voltage and lower than the first write voltage to the third and fourth word lines. 